Title :
157nm resist material design for improvement of its transparency by using highly precise theoretical calculation
Author :
Yamazaki, T. ; Itani, T.
Author_Institution :
Semicond. Leading Edge Technol., Inc., Ibaraki, Japan
Abstract :
Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157nm lithography were calculated theoretically by symmetry adapted cluster configuration interaction (SAC-CI) method. We have investigated several fluorinated norbornanes. Relatively poor transparencies are calculated in the stereoisomers of difluoronorbornane that are substituted at 1,4 or 7 positions. Furthermore the endo fluorination of norbornane is more effective than the exo fluorination. These results are very useful information for the development of resist materials for 157nm lithography.
Keywords :
configuration interactions; organic compounds; photoresists; transparency; ultraviolet lithography; ultraviolet spectra; 157 nm; VUV lithography; chemical substitution; difluoronorbornane; endo fluorination; exo fluorination; fluorinated norbornane; resist material; stereoisomer; symmetry adapted cluster configuration interaction method; transparency; vacuum ultraviolet absorption spectra; Electromagnetic wave absorption; Lead compounds; Lithography; Optical materials; Orbital calculations; Polymers; Resists; Semiconductor devices; Semiconductor materials; Vacuum technology;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178635
