Title :
MEMS IC concept for Reconfigurable Low Noise Amplifier
Author :
Busquere, J.P. ; Grenier, K. ; Dubuc, D. ; Fourn, E. ; Ancey, P. ; Plana, R.
Author_Institution :
LAAS-CNRS, Univ. de Toulouse
Abstract :
This paper investigates the MEMS IC concept for reconfigurable Low noise amplifier. A dual band demonstrator has been chosen and obtained through a very compact architecture that uses a MEMS network and a SiGe LNA. The system features gain larger than 11 dB and noise figure lower than 2.5dB. The concept has been validated on a first prototype, where a bond wire process has been used. Next generation will use an hybrid above IC method
Keywords :
Ge-Si alloys; low noise amplifiers; micromechanical devices; RF MEMS; SiGe; above IC; low noise amplifier; reconfigurability; varactors; Bonding; Dual band; Germanium silicon alloys; Integrated circuit noise; Low-noise amplifiers; Micromechanical devices; Noise figure; Prototypes; Silicon germanium; Wire; Above IC; Low Noise Amplifier; RF MEMS; Reconfigurability; SiGe; Varactors;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281269
