RELACS technique for printing sub-100nm trench using KrF lithography

Author

Wei-Hua Sheu ; Yung-Cheng Chang

Author_Institution

Macronix Int. Co., Ltd., Hsinchu, Taiwan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

248

Abstract

For some sub-0.15um FLASH process, sub-100nm trench, which is the smallest critical dimension to be resolved, becomes a real challenge to conventional KrF lithography. RELACS (resolution enhancement lithography assisted by chemical shrink) process, utilizing the cross-linking reaction catalyzed by the acid in the patterned resist, is originally developed to enhance the resolution for contact hole in DRAM process. Due to its simplicity and robustness, it is viable to be explored for other device features. This paper demonstrates the application of RELACS technique for printing sub-100nm trench using KrF lithography.

Keywords

photoresists; shrinkage; ultraviolet lithography; 0.15 micron; 100 nm; FLASH process; KrF; KrF lithography; RELACS technique; acid catalyzed cross-linking reaction; chemical shrinkage; critical dimension; resist material; resolution enhancement technology; trench printing; Chemical processes; Chemical technology; Chemistry; Floods; Lithography; Pattern formation; Printing; Random access memory; Resists; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178636

Filename

1178636