DocumentCode :
3166219
Title :
Analysis of backscattered electron signals in X-ray mask inspection
Author :
Yasuda, M. ; Kawata, H.
Author_Institution :
Dept. of Phys. & Electron., Osaka Prefecture Univ., Japan
fYear :
2002
fDate :
6-8 Nov. 2002
Firstpage :
260
Lastpage :
261
Abstract :
The authors study the backscattered electron signals from sub-0.1 /spl mu/m X-ray masks with the Monte Carlo simulation of electron scattering. They discuss the optimum condition for effective mask inspection using backscattered electron signals.
Keywords :
Monte Carlo methods; X-ray masks; digital simulation; electron backscattering; inspection; semiconductor process modelling; 0.1 micron; Monte Carlo simulation; X-ray mask inspection; backscattered electron signals; optimum condition; Backscatter; Charge carrier processes; Electron beams; Energy loss; Gold; Inspection; Shape; Signal analysis; X-ray lithography; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
Type :
conf
DOI :
10.1109/IMNC.2002.1178642
Filename :
1178642
Link To Document :
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