DocumentCode
3166219
Title
Analysis of backscattered electron signals in X-ray mask inspection
Author
Yasuda, M. ; Kawata, H.
Author_Institution
Dept. of Phys. & Electron., Osaka Prefecture Univ., Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
260
Lastpage
261
Abstract
The authors study the backscattered electron signals from sub-0.1 /spl mu/m X-ray masks with the Monte Carlo simulation of electron scattering. They discuss the optimum condition for effective mask inspection using backscattered electron signals.
Keywords
Monte Carlo methods; X-ray masks; digital simulation; electron backscattering; inspection; semiconductor process modelling; 0.1 micron; Monte Carlo simulation; X-ray mask inspection; backscattered electron signals; optimum condition; Backscatter; Charge carrier processes; Electron beams; Energy loss; Gold; Inspection; Shape; Signal analysis; X-ray lithography; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178642
Filename
1178642
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