Title :
Excellent high-temperature characteristics for 1.3 μm-strained MQW ASM-DC-PBH LDs fabricated by pulse-mode selective MOVPE
Author :
Sakata, Y. ; Hosoda, T. ; Sasaki, Y. ; Inomoto, Y.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Shiga, Japan
Abstract :
LDs (L=300 μm, 30%-90%) that were all selective MOVPE (ASM) grown with a characteristically low threshold (1th=12 mA, 18 mA) and high efficiency (ηs=0.37 W/A, 0.33 W/A) were produced at high temperature (85°C, 100°C). A low operation current was achieved of 56 mA, 74 mA for 15 mW (@85°C, 100°C), the lowest ever reported for 300 μm-cavity InGaAsP-MQW LDs
Keywords :
indium compounds; 100 C; 12 mA; 15 mW; 18 mA; 300 mum; 56 mA; 74 mA; 85 C; InGaAsP; InGaAsP-MQW LDs; all selective MOVPE; excellent high-temperature characteristic; high efficiency; high temperature; low operation current; low threshold; pulse mode heterostructure; pulse-mode selective MOVPE; strained MQW ASM-DC-PBH LDs;
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-697-0
DOI :
10.1049/cp:19971376
