Sub-10nm lithography using chloromethylated calixarene resist

Author

Ishida, M. ; Fujita, J. ; Ogura, T. ; Ochiai, Y. ; Ohshima, E. ; Momoda, J.

Author_Institution

Fundamental Res. Labs., NEC Corp., Tsukuba, Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

268

Lastpage

269

Abstract

The authors developed a new negative-type electron beam (EB) resist that consists of tri- and tetra-chloromethyl calix[4]arene methylether (CMC4AOMe) in the ratio of 3:7. The resist was soluble in most organic solvents. The standard area dose for the 2 50 keV EB (JBX-5FE) was 1 mC/cm/sup 2/, which was about 50% larger than that of CMC6AOMe precisely according to the difference in the molecular weight. Patterns could be developed with xylene and also ethyl lactate (EL). The minimum line width was about 8 nm when a 7 nm spot diameter EB was used.

Keywords

electron resists; nanolithography; organic compounds; 10 nm; 7 nm; 8 nm; CMC4AOMe; chloromethylated calixarene resist; ethyl lactate; minimum line width; molecular weight; negative-type electron beam resist; spot diameter; standard area dose; tetra-chloromethyl calix[4]arene methylether; tri-chloromethyl calix[4]arene methylether; xylene; Anti-freeze; Crystallization; Electron beams; Lithography; National electric code; Optical reflection; Resists; Silicon; Solvents; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178646

Filename

1178646