Title :
The effect of gel layer formation during development on CDs
Author :
Nakamura, H. ; Takeishi, T. ; Hayasaki, K. ; Ito, S.
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
Abstract :
As fine patterns with small deviation are required, it is necessary to understand the resist development mechanism in order to control critical dimensions (CDs). When the sequence in which wafer rotation process was added to the static development was applied to line patterns, isolated lines and dense lines differed in their CD change behavior. This phenomenon was investigated from the viewpoint of the gel layer.
Keywords :
gels; krypton compounds; nanolithography; photoresists; KrF; KrF resist; centrifugal force; critical dimensions; dense lines; developer penetration; gel layer formation; isolated lines; line patterns; resin dissolution; resist development mechanism; static development; wafer rotation process; wafer rotation speed; Chemicals; Lighting; Manufacturing processes; Resins; Resists;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178647
