Anti-shrinkage coating approach as a solution provider to ArF resists

Author

Si-Hyeung Lee ; Hyung-Do Kim ; Sang-Jun Choi ; Jung-Hyeon Lee ; Han-Ku Cho ; Woo-Sung Han ; Joo-Tae Moon

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

278

Abstract

Summary form only given. The authors present an anti-shrinkage coating (ASC) approach as a solution provider to improve the shrinkage of ArF resists during critical dimension (CD) measurement. Aqueous ASC material consists of anti-shrinking water-soluble polymers and other additives (e.g. cross-linker) and is coated and baked on the developed wafer and rinsed by deionised water. ASC was applied to two 193 nm resist systems and the shrinkages are about 7-8 nm after 50 measurements in the same SEM conditions as for measuring KrF resists. The line shrinkage of the ASC was improved by 70% compared to that of the ArF resist. In addition, the pattern fidelity and LER, which are serious problems for ArF resists, were also improved by the ASC process.

Keywords

argon compounds; coating techniques; krypton compounds; nanolithography; photoresists; polymer films; shrinkage; 193 nm; 7 to 8 nm; ArF; ArF resists; KrF; KrF resists; SEM conditions; anti-shrinkage coating; critical dimension measurement; cross-linker additives; line shrinkage; pattern fidelity; water-soluble polymers; Coatings; Metrology; Polymer films; Research and development; Size measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178651

Filename

1178651