DocumentCode
3166492
Title
Resist pattern collapse with top rounding resist profile
Author
Hyung-Joo Lee ; Jun-Taek Park ; Ji-Yong Yoo ; Ilsin An ; Hye-Keun Oh
Author_Institution
Dept. of Phys., Hanyang Univ., Kyunggi-Do, South Korea
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
280
Lastpage
281
Abstract
The pattern size is reduced as the device is more integrated. The resist deformation phenomenon has been a serious problem for under 100 nm line width patterns. In this study, a simulation tool for pattern collapse is created by using the existing beam sway model, and the effects of resist profile that exert on the pattern collapse have been studied. The simulated results show that the pattern collapse phenomenon is reduced for the top rounding resist profile rather than for vertical profiles.
Keywords
deformation; digital simulation; nanolithography; resists; semiconductor process modelling; 100 nm; beam sway model; resist deformation; resist pattern collapse; simulation tool; top rounding resist profile; vertical profile; Analytical models; Cost function; Deformable models; Fluid flow; Optimization methods; Pattern analysis; Physics; Resists; Spinning; Surface tension;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178652
Filename
1178652
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