Title :
Resist pattern collapse with top rounding resist profile
Author :
Hyung-Joo Lee ; Jun-Taek Park ; Ji-Yong Yoo ; Ilsin An ; Hye-Keun Oh
Author_Institution :
Dept. of Phys., Hanyang Univ., Kyunggi-Do, South Korea
Abstract :
The pattern size is reduced as the device is more integrated. The resist deformation phenomenon has been a serious problem for under 100 nm line width patterns. In this study, a simulation tool for pattern collapse is created by using the existing beam sway model, and the effects of resist profile that exert on the pattern collapse have been studied. The simulated results show that the pattern collapse phenomenon is reduced for the top rounding resist profile rather than for vertical profiles.
Keywords :
deformation; digital simulation; nanolithography; resists; semiconductor process modelling; 100 nm; beam sway model; resist deformation; resist pattern collapse; simulation tool; top rounding resist profile; vertical profile; Analytical models; Cost function; Deformable models; Fluid flow; Optimization methods; Pattern analysis; Physics; Resists; Spinning; Surface tension;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178652
