DocumentCode :
3166512
Title :
Application of electron beam cured spin-on glass to tri-level resist system for deep and vacuum ultraviolet lithography
Author :
Sato, Yuuki ; Abe, J. ; Hayashi, H. ; Shibata, Takuma
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
fYear :
2002
fDate :
6-8 Nov. 2002
Firstpage :
282
Lastpage :
283
Abstract :
A positive chemically amplified (CA) resist can cause footing because the acid in the CA resist diffuses into the spin-on glass (SOG) film due to its porous structure. Densifying the SOG film with electron beams (EB) is proposed in order to solve this problem. This method not only avoids footing but also increases the etch resistance of SOG for etching organic underlayers precisely.
Keywords :
curing; densification; electron beam annealing; etching; flow through porous media; photoresists; porosity; spin coating; ultraviolet lithography; acid diffusion; deep ultraviolet lithography; electron beam curing; etch resistance; film densification; footing; organic underlayers; porous structure; positive chemically amplified resist; spin-on glass film; tri-level resist system; vacuum ultraviolet lithography; Electron beams; Glass; Lithography; Optical films; Reflectivity; Resists; Semiconductor films; Sputter etching; Substrates; Vacuum systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
Type :
conf
DOI :
10.1109/IMNC.2002.1178653
Filename :
1178653
Link To Document :
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