Application of electron beam cured spin-on glass to tri-level resist system for deep and vacuum ultraviolet lithography

Author

Sato, Yuuki ; Abe, J. ; Hayashi, H. ; Shibata, Takuma

Author_Institution

Semicond. Co., Toshiba Corp., Yokohama, Japan

fYear

2002

fDate

6-8 Nov. 2002

Firstpage

282

Lastpage

283

Abstract

A positive chemically amplified (CA) resist can cause footing because the acid in the CA resist diffuses into the spin-on glass (SOG) film due to its porous structure. Densifying the SOG film with electron beams (EB) is proposed in order to solve this problem. This method not only avoids footing but also increases the etch resistance of SOG for etching organic underlayers precisely.

Keywords

curing; densification; electron beam annealing; etching; flow through porous media; photoresists; porosity; spin coating; ultraviolet lithography; acid diffusion; deep ultraviolet lithography; electron beam curing; etch resistance; film densification; footing; organic underlayers; porous structure; positive chemically amplified resist; spin-on glass film; tri-level resist system; vacuum ultraviolet lithography; Electron beams; Glass; Lithography; Optical films; Reflectivity; Resists; Semiconductor films; Sputter etching; Substrates; Vacuum systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Conference_Location

Tokyo, Japan

Print_ISBN

4-89114-031-3

Type

conf

DOI

10.1109/IMNC.2002.1178653

Filename

1178653