Title :
Ultrathin resist pattern transfer process by filling mask material in the resist pattern
Author :
Kato, H. ; Matsunaga, K. ; Abe, J. ; Onishi, Y.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama, Japan
Abstract :
The authors propose a multi-layer resist process whose distinctive feature is filling mask material in the resist pattern. Because this process does not need etch resistance for the resist film, it is favorable for the thin resist pattern transfer process. They show and discuss the results of ultrathin resist pattern transfer experiments.
Keywords :
etching; lithography; masks; resists; etch resistance; filling mask material; multi-layer resist process; resist film; resist pattern; ultrathin resist pattern transfer; Electron beams; Etching; Filling; Lithography; Manufacturing processes; Resists; Semiconductor device manufacture; Semiconductor films; Semiconductor materials; Substrates;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-031-3
DOI :
10.1109/IMNC.2002.1178654
