Imaging techniques to support low k1 optical lithography

Summary form only given. With half pitch k factors rapidly approaching sub 0.4, many lithography groups have looked seriously into alternative patterning and mask techniques. The semiconductor industry continues to explore numerous techniques for printing smaller geometry´s with the hope of improving resolution and process window. There are a number of new and interesting mask/illumination techniques that have been published. These new mask techniques come with a variety of integration issues and manufacturing risks. The ITRS roadmap has become a living document with continuous change as imaging nodes change with improvements in imaging techniques or from delays in tool and process programs. ArF initially was planned for introduction at 0.18 /spl mu/m, however; real implementation may not begin until the 0.13 /spl mu/m or 0.100 /spl mu/m depending on the company. Moreover, very high NA ArF is now considered the up front candidate for the 0.065 /spl mu/m node. This presentation will discuss the various activities centered on imaging techniques to support the 0.065/spl mu/m node with high NA ArF. The authors will discuss experimental activities for 0.100 /spl mu/m and sub-0.100 /spl mu/m contacts along with 0.065mn imaging through a variety of mask and illumination techniques.