• DocumentCode
    3166661
  • Title

    High performance infrared detector arrays using thin film microstructures

  • Author

    Cole, B. ; Horning, R. ; Johnson, B. ; Nguyen, K. ; Kruse, P.W. ; Foote, M.C.

  • Author_Institution
    Honeywell Technol. Center, USA
  • fYear
    1991
  • fDate
    33457
  • Firstpage
    653
  • Lastpage
    656
  • Abstract
    Honeywell has developed a unique uncooled thermal detector technology based on fabricating thin film structures with temperature sensitive detector materials. High TCR resistive materials such as VOx and YBaCuO, and pyroelectric PbTiO3 have been used. Two dimensional imaging arrays of sizes up to 240×336 have been integrated with Si substrate electronics to achieve temperature sensitivities of less than .04 C operating at room temperature. The thin film detector materials are deposited on microstructure thin film pixels of 2 mil sizes which are subsequently thermally isolated from the substrate by etching away the underlying substrate. The thermal isolation of the microstructure pixel provides the temperature rise and the detector material provides the conversion to an electrical signal
  • Keywords
    arrays; barium compounds; bolometers; etching; ferroelectric devices; ferroelectric thin films; infrared detectors; infrared imaging; insulating thin films; lead compounds; pyroelectric detectors; vanadium compounds; yttrium compounds; 2 mm; 20 C; 240 pixel; 336 pixel; 80640 pixel; PbTiO3; Si; Si substrate electronics; VO; VOx; VOx; YBaCuO; electrical signal; etching; high TCR resistive materials; high performance infrared detector arrays; microstructure thin film pixels; pyroelectric PbTiO3; room temperature; temperature rise; temperature sensitive detector materials; temperature sensitivities; thermal isolation; thin film microstructures; thin film structures; two dimensional imaging arrays; uncooled thermal detector technology; Infrared detectors; Microstructure; Optical imaging; Pyroelectricity; Sensor arrays; Sputtering; Substrates; Temperature sensors; Transistors; Yttrium barium copper oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
  • Conference_Location
    University Park, PA
  • Print_ISBN
    0-7803-1847-1
  • Type

    conf

  • DOI
    10.1109/ISAF.1994.522454
  • Filename
    522454