Title :
Wideband VGAs Using a CMOS Transconductor in Triode region
Author :
Lee, Hui Dong ; Lee, Kyung Ai ; Hong, Songcheol
Author_Institution :
Dept. of Electron. Eng. & Comput. Sci., KAIST, Daejeon
Abstract :
Wideband variable gain amplifiers (VGAs) fabricated using 0.18 mum CMOS process are presented. A scheme with a CMOS triode transconductor is proposed to achieve linear-in-dB characteristics of VGAs for ultra wideband (UWB) systems. The implemented transmitter (TX) VGA shows a highly linear gain range of 28.4 dB (7 dB to -21.4 dB) and a bandwidth of 1200 MHz, while drawing only 2.7 mA from a 1.8 V power supply. The receiver (RX) VGA achieves a linear gain range of 73 dB and a bandwidth of 950 MHz while drawing 12.8 mA. The output P1dB varies from -8.5 dBm to -6 dBm. The TX and the RX VGA chips occupy areas of 0.2 times 0.2 mm and 0.6 times 0.2 mm, respectively
Keywords :
CMOS integrated circuits; transmitters; triodes; ultra wideband technology; wideband amplifiers; 0.18 micron; 1.8 V; 12.8 mA; 1200 MHz; 2.7 mA; 950 MHz; CMOS process; CMOS triode transconductor; implemented transmitter; triode region; ultra wideband systems; wideband VGA; wideband variable gain amplifiers; Bandwidth; Broadband amplifiers; Dynamic range; Gain; Multiaccess communication; Transceivers; Transconductors; Transmitters; Ultra wideband technology; Voltage control; CMOS; triode transconductor; ultra wideband (UWB); variable gain amplifier (VGA);
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281330
