Kukielka and Meyer wideband dual feedback amplifiers using GaInP/GaAs HBT technology

Author

Syu, Jin-Siang ; Wu, Tzung-Han ; Meng, Chinchun ; Huang, Guo-Wei

Author_Institution

Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1643

Lastpage

1646

Abstract

GaInP/GaAs HBT inductorless wideband amplifiers using shunt-series shunt-shunt dual-feedback topology (Kukielka topology) and shunt-series series-shunt dual-feedback topology (Meyer topology) are demonstrated in this paper. Three amounts of feedback are applied on each topology. At the high gain mode, the Kukielka/Meyer wideband amplifier achieves the small-signal power gain of 30/27 dB with the 3-dB bandwidth of 6 GHz at a 5-V supply. The noise figure of both amplifiers is lower than 3 dB within 6 GHz. Increasing the amount of feedback widens the bandwidth at the cost of power gain and noise figure degradation.

Keywords

feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; network topology; phosphorus compounds; wideband amplifiers; GaAs; GaInP; GalnP/GaAs HBT technology; HBT inductorless wideband amplifiers; Kukielka wideband dual feedback amplifiers; Meyer wideband dual feedback amplifiers; bandwidth 6 GHz; gain 27 dB; gain 30 dB; shunt-series series-shunt feedback topology; shunt-series shunt-shunt dual-feedback topology; voltage 5 V; Bandwidth; Broadband amplifiers; Costs; Degradation; Feedback amplifiers; Gallium arsenide; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Topology; GaInP/GaAs HBT; Kukielka; Meyer; feedback amplifier; wideband amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384339

Filename

5384339