Title :
High responsivity side illuminated AlGaInAs PIN photodiode for 40 Gbit/s-40 GHz applications
Author :
Wanlin, G. ; Giraudet, L. ; Praseuth, JP ; Miras, A. ; Legros, E.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
This paper describes the design procedure and experimental results of a high speed and high responsivity multimode AlGaInAs side-illuminated PIN photodiode. Fabricated devices exibit very low dark current (<1 nA) together with a very high responsivity of 0.8 A/W and a frequency cut-off higher than 40 GHz at 1.55 μm wavelength
Keywords :
aluminium compounds; 1.55 mum; 40 Gbit/s; AlGaInAs; GHz applications; design procedure; frequency cut-off; high responsivity multimode AlGaInAs side-illuminated PIN photodiode; high responsivity side illuminated AlGaInAs PIN photodiode; high speed; very low dark current;
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-697-0
DOI :
10.1049/cp:19971411
