DocumentCode
316685
Title
High responsivity side illuminated AlGaInAs PIN photodiode for 40 Gbit/s-40 GHz applications
Author
Wanlin, G. ; Giraudet, L. ; Praseuth, JP ; Miras, A. ; Legros, E.
Author_Institution
Lab. de Bagneux, CNET, Bagneux, France
Volume
2
fYear
1997
fDate
22-25 Sep 1997
Firstpage
37
Abstract
This paper describes the design procedure and experimental results of a high speed and high responsivity multimode AlGaInAs side-illuminated PIN photodiode. Fabricated devices exibit very low dark current (<1 nA) together with a very high responsivity of 0.8 A/W and a frequency cut-off higher than 40 GHz at 1.55 μm wavelength
Keywords
aluminium compounds; 1.55 mum; 40 Gbit/s; AlGaInAs; GHz applications; design procedure; frequency cut-off; high responsivity multimode AlGaInAs side-illuminated PIN photodiode; high responsivity side illuminated AlGaInAs PIN photodiode; high speed; very low dark current;
fLanguage
English
Publisher
iet
Conference_Titel
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location
Edinburgh
ISSN
0537-9989
Print_ISBN
0-85296-697-0
Type
conf
DOI
10.1049/cp:19971411
Filename
628027
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