Title :
A study of underlayer geometry effects on interconnect line characteristics through S-parameter measurements
Author :
Wee, Jae-Kyung ; Kim, Young-Hee ; Kim, Yong-Ju ; Lee, Pil-Soo ; Jeon, Yong-Je ; Kim, Jo-Han ; Yoon, Han-Sub ; Chung, Jin-Yong
Author_Institution :
Hyundai Electron. Ind., Kyoungki, South Korea
Abstract :
IC interconnect transmission line effects due to the characteristics of a silicon substrate and crossing metal lines and current return path impedances are physically devised and experimentally characterized. Test transmission line patterns having several underlayer geometries are devised and measured for line parameter characteristics by S-parameter and for signal responses by time domain reflectometry. They are designed and fabricated with a 0.13 μm CMOS DRAM technology. Through this work the effects of underlayer line structures on line parameter differences and signal distortions are studied. The results are useful in gaining a deep understanding of the skew balance of package leads or global signal lines such as clock line and high-performance data lines
Keywords :
CMOS memory circuits; DRAM chips; S-parameters; VLSI; integrated circuit interconnections; integrated circuit packaging; multichip modules; time-domain reflectometry; CMOS DRAM technology; IC interconnect; MCM leads; S-parameter measurements; VLSI interconnects; clock line; crossing metal lines; global signal lines; high-performance data lines; interconnect line characteristics; line parameter differences; package leads; return path impedances; signal distortions; signal responses; silicon substrate; skew balance; time domain reflectometry; time-domain signal transients; transmission line effects; underlayer geometry effects; CMOS technology; Distortion measurement; Geometry; Impedance; Reflectometry; Scattering parameters; Silicon; Testing; Time measurement; Transmission line measurements;
Conference_Titel :
Electronic Components and Technology Conference, 2001. Proceedings., 51st
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-7038-4
DOI :
10.1109/ECTC.2001.927996
