Title :
Low flicker-noise and low leakage direct conversion CMOS mixer for 5GHz application
Author :
Kanaya, H. ; Koga, N. ; Abdelghany, M.A. ; Pokharel, R.K. ; Yoshida, K.
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
Abstract :
This paper presents the design and measurement of low flicker-noise, high conversion gain double-balanced Gilbert cell mixer in CMOS process. Since the noise figure (NF) of the CMOS mixer is strongly affected by flicker noise (1/f noise), a dynamic current injection technique is used to reduce the flicker noise corner frequency. An inductor is employed to tune the tail capacitance in the local oscillator and the RF transconductance stages. So, it reduces the RF leakage through this parasitic capacitance. Moreover, output band elimination filter (BEF) is employed to suppress the leakage of the RF signal. The mixer is designed using TSMC 0.18 ¿m CMOS process. Simulations and measurements had been performed. The proposed mixer has a simulated conversion gain of 15 dB and single side band noise figure is 10.6 dB at 20 kHz.
Keywords :
1/f noise; CMOS integrated circuits; MMIC mixers; band-stop filters; flicker noise; inductors; interference suppression; 1/f noise; RF leakage; RF transconductance; dynamic current injection technique; flicker noise corner frequency; frequency 20 kHz; frequency 5 GHz; gain 15 dB; high conversion gain double-balanced Gilbert cell mixer; inductor; leakage suppression; local oscillator; low leakage direct conversion CMOS mixer; noise figure; noise figure 10.6 dB; output band elimination filter; parasitic capacitance; size 0.18 mum; 1f noise; CMOS process; Gain measurement; Inductors; Mixers; Noise figure; Noise measurement; Noise reduction; Parasitic capacitance; Radio frequency; CMOS mixer; Gilbert cell mixer; band elimination filter; flicker-noise;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384348