Title :
Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs
Author :
Pham-Nguyen, L. ; Fenouillet-Beranger, C. ; Vandooren, A. ; Wild, A. ; Ghibaudo, G. ; Cristoloveanu, S.
Author_Institution :
IMEP-INPG MINATEC, Grenoble
Abstract :
Detailed measurements of front and back channel characteristics in advanced SOI MOSFETs (ultrathin film, metal gate, selective epitaxy of source/drain) are used to reveal the transport properties at the corresponding Si/high-K (HfO2/HfSiON) and Si/SiO2 interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage and subthreshold swing. As compared to Si/SiO2, the mobility is lower at the Si/high-K interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-K and neutral defects.
Keywords :
MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; silicon; silicon compounds; silicon-on-insulator; FD SOI MOSFET; Si-HfO2; Si-HfSiON; Si-SiO2; carrier mobility; high-K interface; neutral defects; scattering mechanisms; threshold voltage; transport properties; ultrathin film; Acoustic scattering; Dielectric measurements; Epitaxial growth; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Phonons; Semiconductor films; Temperature dependence;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656277
