Title :
Session #3 SOI memories
Author :
Liu, Harry ; Makoto Fujiwara
Author_Institution :
Seagate, USA
Keywords :
Fluctuations; High K dielectric materials; Laboratories; Materials science and technology; Microelectronics; Physics computing; Random access memory; Read-write memory; Semiconductor device manufacture; Silicon;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656278
