DocumentCode
3166995
Title
A compact low DC consumption 24-GHz Cascode HEMT VGA
Author
Tsai, Zuo-Min ; Kao, Jui-Chi ; Lin, Kun-You ; Wang, Huei
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2009
fDate
7-10 Dec. 2009
Firstpage
1625
Lastpage
1627
Abstract
This paper presents a 24-GHz high gain and wide gain control range in cascode device technique. The VGA is implemented in 0.15-¿m GaAs PHEMT process. This VGA has 15.7 dB gain and 18.5% 3-dB bandwidth and over 20 dB gain control range at 24 GHz, with a low dc power of 13.5 mW. These results indicate that cascode technique is suitable for low power consumption and small chip size for high frequency amplifiers using GaAs pHEMT process.
Keywords
gallium arsenide; high electron mobility transistors; microwave amplifiers; GaAs; compact low DC consumption cascode HEMT VGA; frequency 24 GHz; gain 15.7 dB; high frequency amplifiers; power 13.5 mW; size 0.15 mum; Bandwidth; Character generation; Energy consumption; Frequency; Gain control; Gallium arsenide; HEMTs; Impedance matching; MMICs; PHEMTs; GaAs; PHEMT; VGA;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location
Singapore
Print_ISBN
978-1-4244-2801-4
Electronic_ISBN
978-1-4244-2802-1
Type
conf
DOI
10.1109/APMC.2009.5384354
Filename
5384354
Link To Document