DocumentCode :
3166995
Title :
A compact low DC consumption 24-GHz Cascode HEMT VGA
Author :
Tsai, Zuo-Min ; Kao, Jui-Chi ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2009
fDate :
7-10 Dec. 2009
Firstpage :
1625
Lastpage :
1627
Abstract :
This paper presents a 24-GHz high gain and wide gain control range in cascode device technique. The VGA is implemented in 0.15-¿m GaAs PHEMT process. This VGA has 15.7 dB gain and 18.5% 3-dB bandwidth and over 20 dB gain control range at 24 GHz, with a low dc power of 13.5 mW. These results indicate that cascode technique is suitable for low power consumption and small chip size for high frequency amplifiers using GaAs pHEMT process.
Keywords :
gallium arsenide; high electron mobility transistors; microwave amplifiers; GaAs; compact low DC consumption cascode HEMT VGA; frequency 24 GHz; gain 15.7 dB; high frequency amplifiers; power 13.5 mW; size 0.15 mum; Bandwidth; Character generation; Energy consumption; Frequency; Gain control; Gallium arsenide; HEMTs; Impedance matching; MMICs; PHEMTs; GaAs; PHEMT; VGA;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
Type :
conf
DOI :
10.1109/APMC.2009.5384354
Filename :
5384354
Link To Document :
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