Title :
Dielectric response of ferroelectric films
Author :
Mansingh, Abhai ; Sayer, M.
Author_Institution :
Dept. of Phys. & Astrophys., Delhi Univ., India
Abstract :
The parameters of the electrical equivalent circuit for crystalline ferroelectric films may be derived from measurements of the dielectric response as a function of frequency and of temperature. Careful corrections must be made to minimise complications due to electrode resistance and probe inductance. In general simple R-C circuit models representing features such as low permittivity surface layers are insufficient to describe the data, and a distribution of relaxation times must be introduced. A major contribution to dielectric loss at low temperatures results from electronic hopping conduction. This is evinced by a frequency dependent ac conductivity of the form σ(ω)=Aωs
Keywords :
dielectric losses; dielectric relaxation; equivalent circuits; ferroelectric thin films; high-frequency effects; hopping conduction; permittivity; crystalline ferroelectric films; dielectric loss; dielectric response; electrical equivalent circuit; electrode resistance; electronic hopping conduction; ferroelectric films; frequency dependence; frequency dependent ac conductivity; low permittivity surface layers; low temperatures; probe inductance; relaxation times; simple R-C circuit models; temperature dependence; Crystallization; Dielectric losses; Dielectric measurements; Electric variables measurement; Electrical resistance measurement; Equivalent circuits; Ferroelectric films; Frequency measurement; Permittivity measurement; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location :
University Park, PA
Print_ISBN :
0-7803-1847-1
DOI :
10.1109/ISAF.1994.522456