DocumentCode
3167054
Title
Dielectric response of ferroelectric films
Author
Mansingh, Abhai ; Sayer, M.
Author_Institution
Dept. of Phys. & Astrophys., Delhi Univ., India
fYear
1991
fDate
33457
Firstpage
663
Lastpage
668
Abstract
The parameters of the electrical equivalent circuit for crystalline ferroelectric films may be derived from measurements of the dielectric response as a function of frequency and of temperature. Careful corrections must be made to minimise complications due to electrode resistance and probe inductance. In general simple R-C circuit models representing features such as low permittivity surface layers are insufficient to describe the data, and a distribution of relaxation times must be introduced. A major contribution to dielectric loss at low temperatures results from electronic hopping conduction. This is evinced by a frequency dependent ac conductivity of the form σ(ω)=Aωs
Keywords
dielectric losses; dielectric relaxation; equivalent circuits; ferroelectric thin films; high-frequency effects; hopping conduction; permittivity; crystalline ferroelectric films; dielectric loss; dielectric response; electrical equivalent circuit; electrode resistance; electronic hopping conduction; ferroelectric films; frequency dependence; frequency dependent ac conductivity; low permittivity surface layers; low temperatures; probe inductance; relaxation times; simple R-C circuit models; temperature dependence; Crystallization; Dielectric losses; Dielectric measurements; Electric variables measurement; Electrical resistance measurement; Equivalent circuits; Ferroelectric films; Frequency measurement; Permittivity measurement; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 1994.ISAF '94., Proceedings of the Ninth IEEE International Symposium on
Conference_Location
University Park, PA
Print_ISBN
0-7803-1847-1
Type
conf
DOI
10.1109/ISAF.1994.522456
Filename
522456
Link To Document