Title :
Material and electrical characterization of stackable planar polysilicon TFT flash memory cell with metal nanocrystals and high-k dielectrics
Author :
Lee, Jaegoo ; Cha, Judy J. ; Barron, Sara C. ; Muller, David A. ; van Dover, R.Bruce ; Amponsah, Ebenezer K. ; Hou, Tuo-Hung ; Raza, Hassan ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
Abstract :
We have characterized the metal-NC high-k-dielectric flash memories on low-temperature UTB-TFTs. Combined with the advantage of low-voltage operations, the reported planar process is expected to be applicable for 3D integration to meet high-density flash memory requirements. Carrier transport was also confirmed to be Frenkle-Poole emission in (Ti,Dy)O and direct tunneling in Al2O3 due to the different trap densities, which helps the retention time in the Al2O3/Au/(Ti,Dy)O memory devices.
Keywords :
Poole-Frenkel effect; alumina; flash memories; gold; high-k dielectric thin films; nanoelectronics; nanostructured materials; thin film transistors; titanium compounds; Al2O3-Au-(TiDy)O; Frenkle-Poole emission; carrier transport; high-k-dielectric flash memory; metal nanocrystals; polysilicon TFT flash memory cell; Aluminum oxide; Flash memory; Flash memory cells; Gold; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Nanocrystals; Thin film transistors; Voltage;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656284
