Material and electrical characterization of stackable planar polysilicon TFT flash memory cell with metal nanocrystals and high-k dielectrics

Author

Lee, Jaegoo ; Cha, Judy J. ; Barron, Sara C. ; Muller, David A. ; van Dover, R.Bruce ; Amponsah, Ebenezer K. ; Hou, Tuo-Hung ; Raza, Hassan ; Kan, Edwin C.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY

fYear

2008

fDate

6-9 Oct. 2008

Firstpage

39

Lastpage

40

Abstract

We have characterized the metal-NC high-k-dielectric flash memories on low-temperature UTB-TFTs. Combined with the advantage of low-voltage operations, the reported planar process is expected to be applicable for 3D integration to meet high-density flash memory requirements. Carrier transport was also confirmed to be Frenkle-Poole emission in (Ti,Dy)O and direct tunneling in Al₂O₃ due to the different trap densities, which helps the retention time in the Al₂O₃/Au/(Ti,Dy)O memory devices.

Keywords

Poole-Frenkel effect; alumina; flash memories; gold; high-k dielectric thin films; nanoelectronics; nanostructured materials; thin film transistors; titanium compounds; Al₂O₃-Au-(TiDy)O; Frenkle-Poole emission; carrier transport; high-k-dielectric flash memory; metal nanocrystals; polysilicon TFT flash memory cell; Aluminum oxide; Flash memory; Flash memory cells; Gold; High K dielectric materials; High-K gate dielectrics; Inorganic materials; Nanocrystals; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2008. SOI. IEEE International

Conference_Location

New Paltz, NY

ISSN

1078-621X

Print_ISBN

978-1-4244-1954-8

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2008.4656284

Filename

4656284