Title :
PD-SOI MOSFET Body-to-Body leakage scaling trend and optimization
Author :
Lo, H.C. ; Luo, W.C. ; Lu, W.Y. ; Cheng, C.F. ; Wu, Benny ; Chen, T.L. ; Lien, C.H. ; Fung, Samuel K H ; Tuan, H.C.
Author_Institution :
R&D, Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
Abstract :
Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65 nm to 45 nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level.
Keywords :
MOSFET; leakage currents; optimisation; silicon-on-insulator; PD-SOI MOSFET; body-to-body leakage scaling; optimization; shallower S-D junctions; stacked transistor configuration; Capacitance; Cities and towns; Conference proceedings; Fabrication; Germanium silicon alloys; Implants; MOSFET circuits; Research and development; Semiconductor device manufacture; Silicon germanium;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656288
