Title :
The low subthreshold swing possibility with asymmetries in double-gate SOI MOSFET
Author :
Shih, Kun-Huan ; Chui, Chi On
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
Abstract :
Both structural and bias asymmetries in double-gate (DG) SOI MOSFET have been critically examined for the sub-60 mV/dec subthreshold swing (SS) possibility. Physical mechanisms are illustrated to explain the inability of all the analyzed structural asymmetries and the feasibility with the bias asymmetries.
Keywords :
MOSFET; hydrodynamics; semiconductor device models; silicon-on-insulator; Si; bias asymmetries; double-gate SOI MOSFET; hydrodynamic simulations; physical mechanisms; structural asymmetries; subthreshold swing possibility; Conference proceedings; Decision support systems; MOSFET circuits; Virtual reality;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656290
