• DocumentCode
    3167326
  • Title

    A revisited pseudo-MOSFET model for ultrathin SOI films

  • Author

    Rodriguez, N. ; Cristoloveanu, S. ; Gámiz, F.

  • Author_Institution
    Dept. de Electron., Univ. of Granada, Granada
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    65
  • Lastpage
    66
  • Abstract
    The pseudo-MOS transistor (Psi-MOSFET) is a quick technique for monitoring SOI wafers. Based on Poisson numerical simulations, we derive updated models for the characterization of ultrathin films, accounting for the density of traps of passivated and nonpassivated surfaces. These analytical models match the experimental results and are useful for accurate parameter extraction.
  • Keywords
    MOSFET; Poisson equation; semiconductor device models; semiconductor thin films; silicon-on-insulator; Poisson numerical simulations; Si; nonpassivated surfaces; passivated surfaces; pseudoMOSFET model; ultrathin SOI films; Conference proceedings; Decision support systems; Quadratic programming;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656296
  • Filename
    4656296
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167326