Generation of sub-nanosecond 7V Gaussian pulse using GaAs HBT with 3V battery supply

A new sub-nanosecond high power impulse generator is presented in this paper for ultra-wideband communication and radar systems using InGaP/GaAs HBT technology. The topology is simple, compact and can be readily integrated into MMIC. It works on two principles: a faster transition can be obtained from a digital logic input into the HBT and a differentiation of the very fast transition current using the inductor to generate a large voltage at the output. Measurement results show the generated Gaussian pulse has a tunable peak voltage between 1 V to 7 V with full-width-half-maximum (FWHM) between 200 ps to 250 ps. The impulse generator is biased at 3 V battery supply and consumes 27 mW to generate a 7 V high 250 ps wide Gaussian impulse at a 1 MHz pulse repetition rate (PRF).