DocumentCode :
3167374
Title :
Strain relaxation in nanostructured ultra thin SSOI
Author :
Moutanabbir, O. ; Reiche, M. ; Erfurth, W. ; Scholz, R. ; Gösele, U.
Author_Institution :
Max Planck Inst. of Microstructure Phys., Halle
fYear :
2008
fDate :
6-9 Oct. 2008
Firstpage :
71
Lastpage :
72
Abstract :
This article addresses the behavior of strain in ultrathin SSOI during the nanopatterning process.
Keywords :
Raman spectra; elemental semiconductors; nanopatterning; nanostructured materials; semiconductor thin films; silicon compounds; silicon-on-insulator; ultraviolet spectra; Raman spectroscopy; SSOI; Si; SiO2-Si; nanopatterning process; nanostructured ultra thin strained silicon-on insulator; strain relaxation; ultraviolet spectroscopy; wavelength 325 nm; Capacitive sensors; Conference proceedings; Etching; Fabrication; Laser beams; Nanoscale devices; Nanostructures; Scanning electron microscopy; Silicon on insulator technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
ISSN :
1078-621X
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2008.4656299
Filename :
4656299
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3167374
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