• DocumentCode
    3167418
  • Title

    Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method

  • Author

    Lee, Wei ; Su, Pin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    In this work, we investigate the channel backscattering characteristics for SOI MOSFETs using a new temperature-dependent method with consideration of self-heating effects. The temperature sensitivity of mobility (beta, mu0propTbeta) is self-consistently determined along with the backscattering coefficient rsat.
  • Keywords
    MOSFET; phonons; silicon-on-insulator; MOSFET; Si-Jk; channel backscattering characteristics; phonon scattering; self-heating effects; temperature sensitivity; Backscatter; Conference proceedings; Immune system; MOSFETs; Nanoscale devices; Phonons; Scattering; Temperature dependence; Temperature sensors; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656300
  • Filename
    4656300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167418