DocumentCode :
3167418
Title :
Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method
Author :
Lee, Wei ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
fYear :
2008
fDate :
6-9 Oct. 2008
Firstpage :
73
Lastpage :
74
Abstract :
In this work, we investigate the channel backscattering characteristics for SOI MOSFETs using a new temperature-dependent method with consideration of self-heating effects. The temperature sensitivity of mobility (beta, mu0propTbeta) is self-consistently determined along with the backscattering coefficient rsat.
Keywords :
MOSFET; phonons; silicon-on-insulator; MOSFET; Si-Jk; channel backscattering characteristics; phonon scattering; self-heating effects; temperature sensitivity; Backscatter; Conference proceedings; Immune system; MOSFETs; Nanoscale devices; Phonons; Scattering; Temperature dependence; Temperature sensors; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
ISSN :
1078-621X
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2008.4656300
Filename :
4656300
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3167418
بازگشت