Title :
Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode
Author :
Fornetti, F. ; Beach, M.A. ; Morris, K.A.
Author_Institution :
Centre for Commun. Res., Univ. of Bristol, Bristol, UK
Abstract :
The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5 GHz.
Keywords :
III-V semiconductors; frequency-domain analysis; gallium compounds; high electron mobility transistors; microwave field effect transistors; time-domain analysis; wide band gap semiconductors; GaN; HEMTs; fall time; frequency 100 kHz to 450 kHz; frequency 3.5 GHz; frequency domain analysis; pulse repetition frequency; pulsed RF applications; pulsed waveform amplification; radar; rise time; time domain analysis; Frequency domain analysis; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Power generation; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage; GaN; HEMTs; Radar; power amplifiers; pulsed RF;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384372
