Title :
High resistivity SOI CMOS technology for multi-standard RF frontends
Author :
Gianesello, F. ; Gloria, D. ; Boret, S. ; Bon, O. ; Touret, P. ; Pastore, C. ; Rauber, B. ; Raynaud, C.
Author_Institution :
TR&D, STMicroelectron., Crolles
Abstract :
SOI technology is now emerging as a promising one for the integration of RF front-end modules, mainly for antenna switches and power amplifiers (PAs). This paper reviews the performances of STMicroelectronics 0.13 mum High Resistivity (HR) SOI CMOS technology and discusses the potentiallity for SOI technology to capture RF front-end business in the near future.
Keywords :
CMOS integrated circuits; antenna accessories; power amplifiers; silicon-on-insulator; STMicroelectronics; antenna switches; high resistivity SOI CMOS technology; multistandard RF frontends; power amplifiers; size 0.13 mum; CMOS technology; Conductivity; Costs; Inductors; Integrated circuit technology; Radio frequency; Silicon; Switches; Transceivers; Wireless LAN;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656302
