30 W VHF 6H-SiC power static induction transistor

Author

Clarke, R.C. ; Siergiej, R.R. ; Agarwal, Anant K. ; Brandt, C.D. ; Burk, A.A., Jr. ; Morse, A. ; Orphanos, P.A.

Author_Institution

Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

47

Lastpage

55

Abstract

6H-SiC Static Induction Transistors (SITs) have been demonstrated, using SiC specific semiconductor processing technologies such as, VPE, reactive ion etching and self aligned sidewall Schottky gates. Under test conditions, 6H-SiC SITs developed 38 W of output power at 175 MHz, a power added efficiency of 60%, and an associated gain of 10 dB. The maximum channel current was 300 mA/cm, and the maximum blocking voltage was 200 V

Keywords

VHF devices; power field effect transistors; semiconductor device testing; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor technology; silicon compounds; sputter etching; static induction transistors; vapour phase epitaxial growth; 10 dB; 175 MHz; 200 V; 38 W; 60 percent; SiC; VHF; VPE; blocking voltage; maximum channel current; output power; power added efficiency; power static induction transistor; reactive ion etching; self aligned sidewall Schottky gates; semiconductor processing technologies; test conditions; Dielectric constant; Dielectric materials; Electron mobility; Etching; Geometry; Semiconductor materials; Silicon carbide; Space charge; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482419

Filename

482419