Analysis and optimum design of impedance matching for Ka-Band cryogenic low noise amplifiers

Author

Hou, Yang ; Wen, Ruming ; Li, Lingyun ; Cui, Hengrong ; Qian, Rong ; Sun, Xiaowei

Author_Institution

RF & Microwave Syst. Lab., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1593

Lastpage

1596

Abstract

High electron mobility transistors (HEMTs) and cryogenic cooling are widely employed in high gain and low noise millimeter-wave amplifiers. By using the temperature dependant model of HEMT, this paper further investigated the optimum impedance matching for low noise amplifiers (LNAs) to exhibit a significant improvement in noise and gain performance under cryogenic temperatures. One MMIC LNA covering 26-40 GHz frequency band has been developed on GaAs substrate with 0.15 Â¿m pHEMT devices, and it was measured on-wafer and in-module at the operating temperatures of 300 K and 77 K.

Keywords

III-V semiconductors; MMIC amplifiers; cryogenic electronics; gallium arsenide; impedance matching; low noise amplifiers; millimetre wave amplifiers; power HEMT; GaAs; HEMTs; Ka-band cryogenic low noise amplifiers; MMIC LNA; cryogenic cooling; cryogenic temperatures; frequency 26 GHz to 40 GHz; gallium arsenide substrate; high electron mobility transistors; high gain millimeter-wave amplifiers; in-module measurement; low noise millimeter-wave amplifiers; on-wafer measurement; optimum impedance matching; pHEMT devices; size 0.15 mum; temperature 300 K; temperature 77 K; temperature dependant model; Cooling; Cryogenics; HEMTs; Impedance matching; Low-noise amplifiers; MMICs; MODFETs; Millimeter wave transistors; Performance gain; Temperature dependence; Cryogenic; HEMTs; MMIC amplifiers; Millimeter wave circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384378

Filename

5384378