DocumentCode
316757
Title
Highly reliable 1.55-μm strain compensated multiple quantum well distributed feedback ridge waveguide lasers grown by single step MOVPE
Author
Nakamura, Koji ; Oshiba, Saeko ; Horikawa, Hideaki
Author_Institution
R&D Group, Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Volume
2
fYear
1997
fDate
22-25 Sep 1997
Firstpage
208
Abstract
Strain compensated multiple quantum well distributed feedback lasers emitting at 1.55 μm have been fabricated by single step metalorganic vapor phase epitaxy on patterned substrates. The lasers demonstrate high device yield with high performance and stable operation, at a constant output power of 10 mW, over 1300 hours at 25°C and 300 hours at 50°C
Keywords
indium compounds; 1.55 mum; 10 W; 1300 h; 25 C; 300 h; 50 C; DFB MQW lasers; InGaAsP; constant output power; high device yield; high performance; highly reliable strain compensated multiple quantum well distributed feedback ridge waveguide lasers; life testing; patterned substrates; single step MOVPE; single step metalorganic vapor phase epitaxy; stable operation,;
fLanguage
English
Publisher
iet
Conference_Titel
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location
Edinburgh
ISSN
0537-9989
Print_ISBN
0-85296-697-0
Type
conf
DOI
10.1049/cp:19971453
Filename
628160
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