DocumentCode :
3167580
Title :
High performance microwave elements for SiGe MMICs
Author :
Case, Michael ; MacDonald, Perry ; Matloubian, Mehran ; Chen, Mary ; Larson, Larry ; Rensch, David
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fYear :
1995
fDate :
7-9 Aug 1995
Firstpage :
85
Lastpage :
92
Abstract :
We demonstrate a low cost, manufacturable method for fabricating microwave elements on lossy substrates as required for Si-based devices. These microwave elements require a ground-plane on the surface of the Si substrate to shield the lossy dielectric below and use a 13 μm thick layer of benzocyclobutene (BCB) for wave propagation. The performance of the transmission lines and MMICs thus fabricated are comparable to their GaAs counterparts
Keywords :
Ge-Si alloys; MMIC; integrated circuit technology; microstrip lines; semiconductor materials; Si; SiGe; SiGe MMICs; benzocyclobutene layer; dielectric shielding; fabrication; ground-plane; lossy substrates; low cost manufacture; microwave elements; transmission lines; wave propagation; Costs; Dielectric losses; Dielectric substrates; Germanium silicon alloys; MMICs; Manufacturing; Microwave devices; Microwave theory and techniques; Silicon germanium; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
ISSN :
1079-4700
Print_ISBN :
0-7803-3970-3
Type :
conf
DOI :
10.1109/CORNEL.1995.482423
Filename :
482423
Link To Document :
بازگشت