High performance microwave elements for SiGe MMICs

Author

Case, Michael ; MacDonald, Perry ; Matloubian, Mehran ; Chen, Mary ; Larson, Larry ; Rensch, David

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

85

Lastpage

92

Abstract

We demonstrate a low cost, manufacturable method for fabricating microwave elements on lossy substrates as required for Si-based devices. These microwave elements require a ground-plane on the surface of the Si substrate to shield the lossy dielectric below and use a 13 μm thick layer of benzocyclobutene (BCB) for wave propagation. The performance of the transmission lines and MMICs thus fabricated are comparable to their GaAs counterparts

Keywords

Ge-Si alloys; MMIC; integrated circuit technology; microstrip lines; semiconductor materials; Si; SiGe; SiGe MMICs; benzocyclobutene layer; dielectric shielding; fabrication; ground-plane; lossy substrates; low cost manufacture; microwave elements; transmission lines; wave propagation; Costs; Dielectric losses; Dielectric substrates; Germanium silicon alloys; MMICs; Manufacturing; Microwave devices; Microwave theory and techniques; Silicon germanium; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482423

Filename

482423