A High-Performance 14.4 to 19.7 GHz Power Detector Fabricated with Flip-Chip Technology

Author

Zeeb, David M.

Author_Institution

Endwave Corp.

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1621

Lastpage

1624

Abstract

A rugged flip-chip technology with potential for low cost at high manufacturing volume was employed to fabricate a power detector using mixed device technologies. The circuit consists of one discrete GaAs pHEMT chip and one GaAs dual-Schottky-diode chip flip-attached to a 3.5 mm by 2.1 mm substrate containing only passive circuitry. The power detector offers two different modes of operation to enable compensation for drift of the detector diode response over temperature

Keywords

HEMT integrated circuits; III-V semiconductors; Schottky diodes; detector circuits; flip-chip devices; gallium arsenide; integrated circuit packaging; microwave integrated circuits; 14.4 to 19.7 GHz; 2.1 mm; 3.5 mm; GaAs; GaAs dual-Schottky-diode chip; GaAs pHEMT chip; flip-chip technology; mixed device technologies; power detector; Detectors; Electromagnetic heating; Integrated circuit technology; MODFET circuits; Microwave devices; Microwave technology; PHEMTs; Semiconductor diodes; Substrates; Switches; Flip-chip devices; MODFETs; Schottky diodes; microwave detectors; microwave integrated circuits; passive circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281411

Filename

4058156