Title :
One-flux analysis of current blocking in double heterostructure bipolar transistors with composite collectors
Author :
McKinnon, W.R. ; McAlister, S.P. ; Abid, Z. ; Guzzo, E.E.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
We use the flux method of McKelvey, Longini, and Brody [Physical Review 123, 51 (1961)] to analyze current blocking in double heterostructure bipolar transistors (DHBTs) with composite collectors (CC). We include the effects of electron accumulation in the spacer layer in the collector, and show that this accumulation has severe effects at higher currents, imposing an intrinsic limit on the simplest CC design. We compare the results from the flux method with drift-diffusion simulations and measurements on InP/InGaAs/InP CC-DHBTs
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; CC-DHBTs; InP-InGaAs-InP; composite collectors; current blocking; double heterostructure bipolar transistors; drift-diffusion simulation; electron accumulation; one-flux analysis; spacer layer; Bipolar transistors; Chemical vapor deposition; Double heterojunction bipolar transistors; Electrons; Energy barrier; Indium gallium arsenide; Indium phosphide; Knee; Photonic band gap; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482426
