Title :
Buried aluminum nitride insulator for improving thermal conduction in SOI
Author :
Martin, D.M. ; Vallin, Ö ; Katardjiev, I. ; Olsson, J.
Author_Institution :
Angstrom Lab., Uppsala Univ., Uppsala
Abstract :
A new Si-on-AlN substrate has been fabricated and characterised both electrically and thermally. Thermal properties of the new substrate have been identified with a thermal resistance reduced by half to 47.5 K/W compared to reference SOI. Further improvements in fabrication of these new SOI substrates with regard to the alpha-Si layer, oxide layer and in AlN film quality itself would utillise the thermal conductivity of AlN even more.
Keywords :
aluminium compounds; buried layers; elemental semiconductors; insulating thin films; semiconductor thin films; silicon; silicon-on-insulator; thermal conductivity; thermal resistance; SOI substrates; Si-AlN; alpha-silicon layer; aluminum nitride film; buried aluminum nitride insulator; thermal conduction; thermal resistance; Aluminum nitride; Fabrication; Insulation; Silicon on insulator technology; Substrates; Testing; Thermal conductivity; Thermal degradation; Thermal resistance; Wafer bonding;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656316
