Title :
New analytical expressions for the design of linear power amplifier using GaN HEMTs
Author :
Chevaux, Nicolas ; De Souza, Maria Merlyne
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Abstract :
This paper provides new analytic expressions for prediction of the large signal gain of GaN high electron mobility transistors (HEMTs). Using the concept of load line resistance, optimum matching impedances and power gain are demonstrated for commercial GaN HEMT from a 14 lumped elements model. The source impedance is more accurately determined by this model.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; impedance matching; power amplifiers; semiconductor device models; wide band gap semiconductors; GaN; HEMTs; high electron mobility transistors; linear power amplifier; load line resistance; lumped element model; optimum matching impedances; power gain; signal gain; source impedance; Analytical models; Gallium nitride; HEMTs; Impedance; MODFETs; MOSFETs; Parasitic capacitance; Power amplifiers; Radio frequency; Signal analysis; Circuit Analysis; MODFETs; impedance matching; power amplifiers;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384389
