DocumentCode
3167791
Title
New analytical expressions for the design of linear power amplifier using GaN HEMTs
Author
Chevaux, Nicolas ; De Souza, Maria Merlyne
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2009
fDate
7-10 Dec. 2009
Firstpage
1112
Lastpage
1115
Abstract
This paper provides new analytic expressions for prediction of the large signal gain of GaN high electron mobility transistors (HEMTs). Using the concept of load line resistance, optimum matching impedances and power gain are demonstrated for commercial GaN HEMT from a 14 lumped elements model. The source impedance is more accurately determined by this model.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; impedance matching; power amplifiers; semiconductor device models; wide band gap semiconductors; GaN; HEMTs; high electron mobility transistors; linear power amplifier; load line resistance; lumped element model; optimum matching impedances; power gain; signal gain; source impedance; Analytical models; Gallium nitride; HEMTs; Impedance; MODFETs; MOSFETs; Parasitic capacitance; Power amplifiers; Radio frequency; Signal analysis; Circuit Analysis; MODFETs; impedance matching; power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location
Singapore
Print_ISBN
978-1-4244-2801-4
Electronic_ISBN
978-1-4244-2802-1
Type
conf
DOI
10.1109/APMC.2009.5384389
Filename
5384389
Link To Document