A 5 GHz Low Noise Amplifier with On-Chip Transformer-Balun

Author

EL-Gharniti, Ouail ; Kerherve, Eric ; Begueret, Jean-Baptiste

Author_Institution

Microelectron. IXL Lab., Bordeaux Univ., Talence

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1648

Lastpage

1651

Abstract

We present the design and implementation of a 5-6 GHz differential low noise amplifier (LNA) for WLAN applications. The LNA is fabricated in 0.25mum SiGe BiCMOS process from STMicroelectronics. By using on-chip transformers a broadband impedance matching (3.5-11 GHz), conversion between single-end and differential signals and smaller chip size are achieved. The LNA exhibits a small signal gain of 14.25 dB and a noise figure of 4.1 dB. It draws 13.3 mA from 1.8 V power supply and exhibits and CP1 of -9 dBm. The chip size including pads is 0.68mm²

Keywords

BiCMOS integrated circuits; Ge-Si alloys; differential amplifiers; impedance matching; low noise amplifiers; microwave amplifiers; wireless LAN; 0.25 micron; 1.8 V; 13.3 mA; 14.25 dB; 3.5 to 11 GHz; 4.1 dB; BiCMOS process; SiGe; broadband impedance matching; differential low noise amplifier; microwave amplifiers; on-chip transformer-balun; wireless LAN applications; BiCMOS integrated circuits; Broadband amplifiers; Differential amplifiers; Gain; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Silicon germanium; Transformers; Wireless LAN; Broadband matching; differential amplifier; low noise amplifier (LNA); on-chip transformer; ultra wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281436

Filename

4058163