• DocumentCode
    3167831
  • Title

    Adjusting to 3D devices in a 2D device world

  • Author

    Harris, H.R. ; Adhikari, H. ; Smith, C.E. ; Smith, G. ; Yang, J.W. ; Majhi, P. ; Jammy, R.

  • Author_Institution
    Texas A&M Univ., College Station, TX
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    The challenges of device scaling and short channel effects have necessitated the close examination of 3 dimensional processing. While this certainly comes with challenges in processing and metrology, it also comes with opportunities for new device paradigms and analysis methods. We will look at an historical perspective of 3D processing and further examine how to accurately ldquothinkrdquo 3D to achieve some of these goals and the ramifications of a few interesting device tricks that 3D processing provides.
  • Keywords
    MOSFET; annealing; doping profiles; silicon-on-insulator; 3D processing; MOSFET; SOI MuGFET; annealing; doping profile; short channel effects; Conference proceedings; Costs; Doping; Etching; FinFETs; History; Jamming; Metrology; Planarization; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656321
  • Filename
    4656321