A high power SiC MESFET class-E power amplifier with an asymmetrical spurline resonator

Author

Wang, Li ; Chen, Wenhua ; Wang, Peng ; Xue, Xin ; Dong, Jiaxing ; Feng, Zhenghe

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1120

Lastpage

1123

Abstract

A high power class-E power amplifier (PA) using a silicon carbide (SiC) metal-semiconductor field effects transistors (MESFET) is presented in this paper, which is designed and implemented at 1 GHz. To improve output power and efficiency by suppressing harmonic powers, the output matching network is consisted of an asymmetrical spurline resonator (ASR). This resonator can provide dual-bandgap characteristics, and be designed to suppress the second harmonic 2 GHz and the third harmonic 3 GHz. At 35 V drain bias and -9 V gate bias voltages, the measured maximum output power of 45.8 dBm with a power-added efficiency (PAE) of 64.6% is achieved at 1 GHz.

Keywords

Schottky gate field effect transistors; power amplifiers; silicon compounds; MESFET class-E power amplifier; SiC; asymmetrical spurline resonator; efficiency 64.6 percent; frequency 1 GHz; frequency 2 GHz; frequency 3 GHz; metal-semiconductor field effects transistors; voltage -9 V; voltage 35 V; Automatic speech recognition; FETs; High power amplifiers; Impedance matching; MESFETs; Power amplifiers; Power generation; Power system harmonics; Silicon carbide; Spurline; Asymmetrical spurline resonator; SiC MESFET; class-E power amplifier; harmonics suppression; high output power;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384392

Filename

5384392