Title :
Single-chip RF Front-end with T/R Switch on Standard Silicon Technology for 5-GHz WLANs
Author :
Zito, D. ; Neri, B.
Author_Institution :
Dipt. di Ingnegneria dell´´Informazione, Pisa Univ.
Abstract :
A fully integrated RF front-end on standard silicon technology for 5-GHz indoor WLAN applications is presented. It includes an innovative T/R antenna switch which does not require any additional technological steps and provides better performance (the measured insertion losses are 0.2 and 0.9 dB, in R and T modes respectively) with respect to those obtained by using PIN diodes as switching elements
Keywords :
low noise amplifiers; microwave switches; p-i-n diodes; semiconductor technology; wireless LAN; 0.2 dB; 0.9 dB; 5 GHz; PIN diodes; T/R antenna switch; indoor WLAN applications; low noise amplifier; radiofrequency switch; single-chip radiofrequency front-end; standard silicon technology; Impedance; Inductance; Integrated circuit technology; Low-noise amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Switches; Switching circuits; Wireless LAN; RF switch; WLAN; low noise amplifier; power amplifier;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281439
