Title :
A Si BJT RF dual band receiver IC for DAB
Author :
Titus, W. ; Croughwell, R. ; Schiller, C. ; DeVito, L.
Author_Institution :
Design Center, Analog Devices Inc., Somerset, NJ, USA
Abstract :
A low cost 1.5 GHz and 200 MHz dual channel broadband receiver IC for Digital Audio Broadcast (DAB) is described. The SSOP-28 packaged Si bipolar device provides 28 dB of conversion gain, 4 dB NP and 50 dB IM3 suppression to a common 920 MHz IF. Two novel 30 dB variable gain, 2.4 dB NP, low noise amplifiers are integrated with doubly balanced mixers, VCO, dual modulus prescaler, AGC and power management circuitry. With a companion IF IC, filters, and 20 MHz frequency synthesizer, it forms a complete DAB receiver for large dynamic range signals between -97 and -5 dBm.
Keywords :
UHF amplifiers; UHF integrated circuits; UHF mixers; bipolar integrated circuits; digital audio broadcasting; elemental semiconductors; radio receivers; silicon; 1.5 GHz; 2.4 dB; 200 MHz; 28 dB; 30 dB; 4 dB; 920 MHz; AGC; DAB application; SSOP-28 packaged device; Si; Si BJT RF dual band receiver IC; VCO; digital audio broadcast; doubly balanced mixers; dual channel broadband receiver; dual modulus prescaler; low noise amplifiers; power management circuitry; Broadband amplifiers; Costs; Digital audio broadcasting; Digital integrated circuits; Dual band; Gain; Integrated circuit noise; Packaging; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689389
