A L-band gain controllable CMOS LNA

Author

Chen, Fei-Hua ; Lin, Shui-Yang ; Duo, Xin-Zhong ; Sun, Xiao-Wei

Author_Institution

RF & Microwave Lab., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1124

Lastpage

1127

Abstract

A L-band gain controllable LNA with digital programmable gain controlling method is presented in this paper. A simple gain control circuit is exploited and added in the second stage of a cascade LNA to achieve gain tuning. Shunt-resistor feedback and noise cancelling technique are introduced in the first stage for excellent input match and low noise performance. Fabricated with 0.13-Â¿m RF CMOS process, the LNA die area with pads is 0.9Ã—0.7mm². Measured results show that maximum power gain and minimum noise figure are 19.6dB and 2.6dB respectively. The LNA has four gain modes in all, tuned by three-bit digital programmed signal with a tuning range of 8dB about 2.5dB/step. Power consumption of the LNA is 14.4mW and typical IIP3 at 1.2GHz is -8dBm.

Keywords

CMOS integrated circuits; gain control; low noise amplifiers; 0.13-Â¿m RF CMOS process; L-band gain controllable CMOS LNA; digital programmable gain controlling method; frequency 1.2 GHz; gain 19.6 dB; gain 2.6 dB; gain control circuit; noise cancelling technique; power 14.4 mW; shunt resistor feedback; CMOS process; Circuit noise; Circuit optimization; Digital control; Feedback; Gain control; Impedance matching; L-band; Noise cancellation; Radio frequency; CMOS; Low noise amplifier (LNA); broadband; feedback;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384394

Filename

5384394