Title :
A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs
Author :
Subramanian, S. ; Schulte, D. ; Ungler, L. ; Plant, T.K. ; Arthur, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of ~95 A/W in the MODFET mode which is ~6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer
Keywords :
gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; As clusters; GaAs; GaAs subbandgap region; field effect transistor; high sensitivity photodetector; lateral MODFET mode; low-temperature MBE grown GaAs; low-temperature grown GaAs layer; modulation doped FET; p-i-n MODFET photodetector; p-i-n diode; traps; vertical p-i-n mode; Epitaxial layers; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Photodetectors; Substrates; Temperature;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482438
