Author :
Witters, L. ; Veloso, A. ; Ferain, I. ; Demand, M. ; Collaert, N. ; Son, N.J. ; Adelmann, C. ; Meersschaut, J. ; Vos, R. ; Rohr, E. ; Wada, M. ; Schram, T. ; Kubicek, S. ; De Meyer, K. ; Biesemans, S. ; Jurczak, M.
Abstract :
In this work, the possibility of achieving low Vt nMOS FinFET transistors through the use of a La2O3 dielectric cap, and the ability of co-integrating La2O3 capping with medium and low Vt pFinFET devices are investigated. A significant improvement in device performance was shown for thin La2O3 capping with CVD TaN electrode.
Keywords :
MOSFET; chemical vapour deposition; electrodes; lanthanum compounds; tantalum compounds; CVD; La2O3-TaN; Vt nMOS FinFET transistors; dielectric capping; electrode; Aluminum oxide; CMOS process; Dielectric devices; Dielectric substrates; Electrodes; FinFETs; High K dielectric materials; High-K gate dielectrics; MOS devices; Tin;
