• DocumentCode
    3167955
  • Title

    Hot electron transistors on silicon substrate (HESS)-a computational prototyping

  • Author

    Kan, Edwin C. ; Jin, Gyo-Young ; Dutton, Robert W.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1995
  • fDate
    7-9 Aug 1995
  • Firstpage
    229
  • Lastpage
    233
  • Abstract
    Operational principles of hot electron transistors based on the real space transfer effect are examined. New device configurations on a silicon substrate without use of heterojunctions are proposed. Design trade-offs for different operating conditions are briefly summarized. The new designs are computationally prototyped by a full-band Monte Carlo device simulator
  • Keywords
    Monte Carlo methods; electronic engineering computing; hot electron transistors; semiconductor device models; silicon; Si; computational prototyping; full-band Monte Carlo device simulator; hot electron transistors; real space transfer effect; silicon substrate; Electrons; Heterojunctions; III-V semiconductor materials; MOSFETs; P-n junctions; Prototypes; Silicon; Space heating; Tunneling; Virtual prototyping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • ISSN
    1079-4700
  • Print_ISBN
    0-7803-3970-3
  • Type

    conf

  • DOI
    10.1109/CORNEL.1995.482439
  • Filename
    482439
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167955