Title :
Hot electron transistors on silicon substrate (HESS)-a computational prototyping
Author :
Kan, Edwin C. ; Jin, Gyo-Young ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
Operational principles of hot electron transistors based on the real space transfer effect are examined. New device configurations on a silicon substrate without use of heterojunctions are proposed. Design trade-offs for different operating conditions are briefly summarized. The new designs are computationally prototyped by a full-band Monte Carlo device simulator
Keywords :
Monte Carlo methods; electronic engineering computing; hot electron transistors; semiconductor device models; silicon; Si; computational prototyping; full-band Monte Carlo device simulator; hot electron transistors; real space transfer effect; silicon substrate; Electrons; Heterojunctions; III-V semiconductor materials; MOSFETs; P-n junctions; Prototypes; Silicon; Space heating; Tunneling; Virtual prototyping;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482439
