DocumentCode
3167992
Title
Comparison of the load-pull power characteristics of common-emitter and common-base heterojunction bipolar transistors
Author
Samelis, A. ; Pavlidis, D. ; Pehlke, D.R. ; Ho, W.J. ; Higgins, J.A. ; Sailer, A.
Author_Institution
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fYear
1995
fDate
7-9 Aug 1995
Firstpage
243
Lastpage
252
Abstract
The power characteristics of common-emitter and common-base AlGaAs-GaAs based HBTs are compared using on-wafer load/pull measurements. Gain compression is more pronounced for common-base HBTs. The sensitivity of the device gain on the load termination conditions is smaller for common-emitter than common-base HBTs. Device self-bias is strongly dependent on load termination at high power levels for CE but not for CB HBTs. As a result, a unique load termination exists resulting in both maximum gain and power added efficiency in the case of CB HBTs. In the case of CE HBTs optimum load terminations can be selected through tradeoffs between the output power and efficiency load-pull contours
Keywords
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave measurement; microwave power transistors; power bipolar transistors; semiconductor device testing; 8 GHz; AlGaAs-GaAs; HBT optimum load terminations; SHF; common-base HBT; common-emitter HBT; device self-bias; gain compression; heterojunction bipolar transistors; load-pull power characteristics; onwafer load/pull measurements; Bipolar transistors; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Power amplifiers; Power generation; Power measurement; Solid state circuits; Tuners;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
ISSN
1079-4700
Print_ISBN
0-7803-3970-3
Type
conf
DOI
10.1109/CORNEL.1995.482441
Filename
482441
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