Title :
An ion implanted In0.53Ga0.47As HFET for optoelectronic integration
Author :
Liao, Michael P. ; East, Jack R. ; Haddad, George I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The fabrication process and device performance of an ion implanted In0.53Ga0.47As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3×1012 cm-2 and an energy of 90 KeV is used to create the conducting channel of the In0.53Ga0.47As HFET. The 1.5 μm ion implanted In0.53Ga0.47As HFET exhibits a maximum extrinsic transconductance (gm) of 180 mS/mm, a cut-off frequency (f T) of 15 GHz, and a maximum frequency of oscillation (fmax) of 80 GHz. The performance of the ion implanted In0.53Ga0.47As HFET is comparable with that of the In0.53Ga0.47As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In0.53Ga0.47As HFET front-end amplifier and an In 0.53Ga0.47As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; metal-semiconductor-metal structures; optical receivers; photodetectors; 1.5 micron; 15 GHz; 180 mS/mm; 80 GHz; 90 keV; HFET front-end amplifier; In0.53Ga0.47As:Si; Si ion implantation; conducting channel; device performance; fabrication process; ion implanted HFET; long wavelength optical receivers; low-cost optical receiver; optimized MSM photodetector layer structure; optoelectronic integration; Cutoff frequency; HEMTs; Ion implantation; MODFETs; Optical amplifiers; Optical device fabrication; Optical receivers; Photodetectors; Semiconductor optical amplifiers; Transconductance;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482443
