• DocumentCode
    3168041
  • Title

    An ion implanted In0.53Ga0.47As HFET for optoelectronic integration

  • Author

    Liao, Michael P. ; East, Jack R. ; Haddad, George I.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1995
  • fDate
    7-9 Aug 1995
  • Firstpage
    260
  • Lastpage
    268
  • Abstract
    The fabrication process and device performance of an ion implanted In0.53Ga0.47As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3×1012 cm-2 and an energy of 90 KeV is used to create the conducting channel of the In0.53Ga0.47As HFET. The 1.5 μm ion implanted In0.53Ga0.47As HFET exhibits a maximum extrinsic transconductance (gm) of 180 mS/mm, a cut-off frequency (f T) of 15 GHz, and a maximum frequency of oscillation (fmax) of 80 GHz. The performance of the ion implanted In0.53Ga0.47As HFET is comparable with that of the In0.53Ga0.47As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In0.53Ga0.47As HFET front-end amplifier and an In 0.53Ga0.47As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; metal-semiconductor-metal structures; optical receivers; photodetectors; 1.5 micron; 15 GHz; 180 mS/mm; 80 GHz; 90 keV; HFET front-end amplifier; In0.53Ga0.47As:Si; Si ion implantation; conducting channel; device performance; fabrication process; ion implanted HFET; long wavelength optical receivers; low-cost optical receiver; optimized MSM photodetector layer structure; optoelectronic integration; Cutoff frequency; HEMTs; Ion implantation; MODFETs; Optical amplifiers; Optical device fabrication; Optical receivers; Photodetectors; Semiconductor optical amplifiers; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • ISSN
    1079-4700
  • Print_ISBN
    0-7803-3970-3
  • Type

    conf

  • DOI
    10.1109/CORNEL.1995.482443
  • Filename
    482443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3168041